This paper presents the design of Trench Insulated Gate Bipolar Transistors (IGBT) based on 1200V platform. Firstly, the principle of carrier storage (CS) layer is introduced, an improvement was made on the traditional IGBT structure to design an IGBT with CS layer. IGBTs with CS layer has a lower on-state voltage drop compared to conventional IGBT. Additionally, the termination structure was designed and the breakdown voltage met the requirements.
Chen et al. (Mon,) studied this question.