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Unipolar "field-effect" transistors of a type suggested by W. Shockley have been constructed and tested. The idealized theory of Shockley has been extended to cover the actual geometries involved, and design nomographs are presented. It is found that these structures can be designed in such a way as to yield a negative resistance at the input terminals. The characteristics of several units are presented and analyzed. It is shown that these characteristics are in substantial agreement with the extended theory. Finally a speculative evaluation of the possible future applications of field effect transistors is made.
Dacey et al. (Sat,) studied this question.