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Photoelectrical characteristics and photoluminescence of n-Bi2O3∕p-GaSe structures have been investigated. They show photosensitivity in the photon energy range of 1.85–3.10eV. During thermal treatment of the heterojunction, Bi and O atoms diffuse into the GaSe layer, forming two impurity levels located at 0.101 and 0.429 eV above the valence-band top of GaSe.
Leontie et al. (Mon,) studied this question.
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