Key points are not available for this paper at this time.
The doping of a quantum dot is an important issue particularly because the luminescence of porous silicon has been attributed to quantum confinement. Since electrochemical etching and possible electroluminescence devices are intimately connected with extrinsic conduction, the quantum size effect on doping, including interactions with induced charges at the dielectric discontinuity, requires investigation.
Tsu et al. (Mon,) studied this question.