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Vapor-grown heteroepitaxial structures of GaAs0.7P0.3/In0.34Ga0.66P have been fabricated into double-heterojunction laser diodes with room-temperature threshold current densities as low as 3400 A/cm2 at λL≃7000 Å. This value is about three times less than the best reported for (Al,Ga)As lasers at this wavelength. From the (Ga,As)P/(In,Ga)P lattice-matched structures, cw operation at 10 °C has been achieved.
Kressel et al. (Tue,) studied this question.
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