November 7, 2002

Simulation of stochastic doping effects in Si MOSFETs

Key Points

Key points are not available for this paper at this time.

Abstract

MOSFET threshold voltage (V/sub T/) variation due to random variations in the number and position of dopant atoms is an increasingly important problem as device dimensions shrink and has received increasing attention. This paper describes a recently implemented 3-D Monte Carlo approach for modeling random dopant fluctuation effects in MOSFETs. We also describe the results of simulating dopant fluctuation effects in several different MOSFET structures.

Demander à l'IA

Bookmark

Cite This Study

Frank et al. (Thu,) studied this question.

synapsesocial.com/papers/6a2248f2d0d1b96d67ab4fbc https://doi.org/https://doi.org/10.1109/iwce.2000.869981