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In this work, non-volatile resistive memory devices were fabricated using a hybrid nanocomposite composed of polyhedral oligomeric silsesquioxane, exfoliated molybdenum disulfide (MoS 2 ) nanosheets, and bimetallic copper-silver (Cu-Ag) particles that act as charge-trapping centers. The Cu-Ag particles were produced through a wet chemical alloying method, while the MoS 2 nanosheets were prepared using a liquid-phase exfoliation technique. The hybrid active layer was deposited onto indium tin oxide substrates to evaluate different device configurations and to examine how the hybrid material and metal particles influenced memory performance. Electrical measurements showed that the devices could reliably switch between two stable resistance states, maintaining clear high and low resistance levels. Devices incorporating the hybrid nanocomposite with Cu-Ag particles demonstrated enhanced switching performance, achieving an ON/OFF current ratio of approximately 10² and exhibiting sharper switching behavior compared to devices without metal particles or those fabricated via layer-by-layer assembly. Retention tests confirmed the non-volatile characteristics of the system, as the polymer matrix combined with two-dimensional nanosheets and bimetallic particles generated a synergistic effect that improved charge storage and transport. These findings highlight the potential of the hybrid nanocomposite structure for developing efficient non-volatile memory systems.
Krishnan et al. (Mon,) studied this question.