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Active control of light-matter interactions in semiconductors is critical for realizing next generation optoelectronic devices with real-time control of the system’s optical properties and hence functionalities via external fields. The ability to dynamically manipulate optical interactions by applied fields in active materials coupled to cavities with fixed geometrical parameters opens up possibilities of controlling the lifetimes, oscillator strengths, effective mass, and relaxation properties of a coupled exciton–photon (or plasmon) system. Here, we demonstrate electrical control of exciton–plasmon coupling strengths between strong and weak coupling limits in a two-dimensional semiconductor integrated with plasmonic nanoresonators assembled in a field-effect transistor device by electrostatic doping. As a result, the energy-momentum dispersions of such an exciton–plasmon coupled system can be altered dynamically with applied electric field by modulating the excitonic properties of monolayer MoS2 arising from many-body effects. In addition, evidence of enhanced coupling between charged excitons (trions) and plasmons was also observed upon increased carrier injection, which can be utilized for fabricating Fermionic polaritonic and magnetoplasmonic devices. The ability to dynamically control the optical properties of a coupled exciton–plasmonic system with electric fields demonstrates the versatility of the coupled system and offers a new platform for the design of optoelectronic devices with precisely tailored responses.
Lee et al. (Wed,) studied this question.