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We present theoretical predictions of the second-harmonic susceptibility due to an intersubband transition within the conduction band of a quantum well in an external applied electric field. The asymmetry of the quantum well due to the electric field accounts for the nonvanishing of the second-order susceptibilities. It is shown that for moderate values of an applied electric field of 10–70 kV/cm, the second-harmonic susceptibility is generally 10–100 times larger than that of bulk GaAs. Furthermore, this procedure of second-harmonic generation can be controlled by an external modulating voltage.
Tsang et al. (1988) studied this question.