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A model for film growth from hyperthermal (1--10^3 eV) species impinging on substrates is proposed. The process includes subsurface implantation, energy loss, preferential displacement of atoms with low displacement energies (E₃) leaving high E₃ atoms undisplaced, and sputtering of substrate material. Epitaxial growth and preferred orientation result from the angular dependence of the E₃ and the host mold effect. The model, supported by ion trajectory calculations and experimental data, is applied to diamond film formation from C^+ ions.
Lifshitz et al. (1989) studied this question.