What question did this study set out to answer?

The aim is to deposit polycrystalline κ-Ga2O3 on Si substrates utilizing a GZO buffer layer.

March 27, 2026Open Access

Polycrystalline κ-Ga 2 O 3 on Si(100) substrates with GZO buffer layers

YHYoshiaki HiraiKyoto Institute of Technology HWHtet Su WaiKochi University of Technology TKToshiyuki KawaharamuraKochi University of Technology

Key Points

The aim is to deposit polycrystalline κ-Ga2O3 on Si substrates utilizing a GZO buffer layer.
Deposited polycrystalline κ-Ga2O3 on Si(100) substrates.
Used a GZO buffer layer during the deposition process.
Monitored the growth process for layer formation.
Successfully deposited κ-Ga2O3 on Si substrates.
Identified the formation of a ZnGa2O4 transition layer during the growth process.

Abstract

Polycrystalline κ-Ga 2 O 3 was successfully deposited on a Si substrate using a GZO buffer layer. Furthermore, it was revealed that a ZnGa 2 O 4 transition layer forms during the growth process.

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