Carbon Inclusions in the Growth of an 8-inch 4H-SiC Crystal

Key Points

• This study aims to investigate how carbon inclusions form during the growth of 4H-SiC crystals and their effects on device performance.
• Utilized physical vapor transport (PVT) for crystal growth.
• Monitored carbon inclusion levels during the growth process.
• Evaluated the impact of inclusions on device functionality.
• Identified significant carbon inclusions in 4H-SiC crystals.
• Noted degradation in performance for devices fabricated with affected crystals.
• Established a correlation between inclusion levels and electrical performance.