Carbon Inclusions in the Growth of an 8-inch 4H-SiC Crystal

Lingling Xuan; Xinyu Xie; Sheng'ou Lu; Qinqin Shao; Anqi Wang; Zeyu Chen; Wang fan; Junyi Shen; Can Cui; Xu Lingmao; Xiaodong Pi; Deren Yang; Xuefeng Han

doi:10.1039/d6ce00148c

January 1, 2026CrystEngComm

Carbon Inclusions in the Growth of an 8-inch 4H-SiC Crystal

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Key Points

This study aims to investigate how carbon inclusions form during the growth of 4H-SiC crystals and their effects on device performance.
Utilized physical vapor transport (PVT) for crystal growth.
Monitored carbon inclusion levels during the growth process.
Evaluated the impact of inclusions on device functionality.
Identified significant carbon inclusions in 4H-SiC crystals.
Noted degradation in performance for devices fabricated with affected crystals.
Established a correlation between inclusion levels and electrical performance.

Implication

Research finds carbon inclusions degrade performance in 4H-SiC crystals during growth, indicating manufacturing challenges.

Abstract

During the physical vapor transport (PVT) growth of a 4H silicon carbide (4H-SiC) crystal carbon inclusion may be incorporated, which substantially degrade the performance of devices based on 4H-SiC. In...

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Cite This Study

Xuan et al. (2026) studied this question.

synapsesocial.com/papers/69cf5eee5a333a821460da69 https://doi.org/10.1039/d6ce00148c

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Carbon Inclusions in the Growth of an 8-inch 4H-SiC Crystal

Key Points

Implication

Abstract

Discussion

Cite This Study

Carbon Inclusions in the Growth of an 8-inch 4H-SiC Crystal

Key Points

Implication

Abstract

Discussion

Cite This Study

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