This study aims to investigate how carbon inclusions form during the growth of 4H-SiC crystals and their effects on device performance.
Utilized physical vapor transport (PVT) for crystal growth.
Monitored carbon inclusion levels during the growth process.
Evaluated the impact of inclusions on device functionality.
Identified significant carbon inclusions in 4H-SiC crystals.
Noted degradation in performance for devices fabricated with affected crystals.
Established a correlation between inclusion levels and electrical performance.
Abstract
During the physical vapor transport (PVT) growth of a 4H silicon carbide (4H-SiC) crystal carbon inclusion may be incorporated, which substantially degrade the performance of devices based on 4H-SiC. In...