Key points are not available for this paper at this time.
In this summary we present design and experimental results of a monolithic L/S band SPDT switch based on AlGaN/GaN HEMT’s. The switch was measured to have 0.87, 0.96, 1 dB insertion loss and 46, 42 and 41 dB isolation at 0.9, 1.8 and 2.1 GHz respectively. The switch also shows linear performance for the power levels up to 1 Watt in the insertion mode and more than 2 Watts in the isolation mode. Index Terms—AlGaN/GaN HEMT, MMIC, switch.
Kaper et al. (Thu,) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: