Experimental design demonstrates efficient switch performance in AlGaN/GaN HEMT technology, indicating significant potential for L/S band applications.
In this summary we present design and experimental results of a monolithic L/S band SPDT switch based on AlGaN/GaN HEMT’s. The switch was measured to have 0.87, 0.96, 1 dB insertion loss and 46, 42 and 41 dB isolation at 0.9, 1.8 and 2.1 GHz respectively. The switch also shows linear performance for the power levels up to 1 Watt in the insertion mode and more than 2 Watts in the isolation mode. Index Terms—AlGaN/GaN HEMT, MMIC, switch.
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Kaper et al. (2004) studied this question.
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