Development of C-band and X-band MMIC SPDT switch using Indigenous GaN HEMT Technology

This paper present design of two MMIC SPDT switches for C-band and X-band transmit/receive switch application based on indigenous 0.25 μ m GaN/AlGaN HEMT technology and its measured results. The measured S-parameter of C-band SPDT switch demonstrates insertion loss less than 0.8 dB, isolation more than 35 dB and return losses better than 18 dB in 5 GHz to 6 GHz frequency band and the measured S-parameter of Xband SPDT switch demonstrates insertion loss less than 1.9 dB, return losses better than 10 dB and isolation better than 40 dB in 9 GHz to 10 GHz frequency band.