X-band Monolithic GaN HEMT LNA based on Indigenous Process

The Aim of this work is to design & develop a X-Band Low Noise amplifier MMIC based on our AlGaN/GaN 0.25 μ m HEMT Indigenous process. A two stage LNA have been demonstrated with common source (CS) with inductive source degeneration Topology. In the frequency band (9.0 GHz - 10.0 GHz) LNA features 11.4 ± 0.3 ~dB linear gain with a noise figure of around 2.1 dB. Input return loss is better than 8 dB & output return loss is better than 10 dB for 15 V drain voltage & 150mA/mm drain current.