GaN HEMT Non Linear Model for RF Switch Applications

In this paper indigenous X band large-signal model of RF switch is demonstrated. The switch model was developed using measurement data of fabricated devices. These devices are based upon 0.25 μm Gallium Nitride HEMT technology on 100 μm SiC substrate. First, the linear model is generated which is based on the extrinsic and intrinsic parameters. The non linear Angelov model is used to model the electrical (I-V) behavior of device. The non-linear capacitance model is used to evaluate the isolation variation in OFF state. Indigenous large-signal model of GaN HEMT based RF switch have been integrated in to PDK (Process Design Kit). It will be used for RF switch applications.