A Temperature‐Dependent Linear RF Switch Model for Common‐Gate High‐Frequency GaN HEMT Transistors

This paper reports a temperature dependent high frequency monolithic microwave integrated circuit (MMIC) linear radio frequency (RF) switch modeling technique for gallium nitride (GaN) RF switch transistors. Linear model extraction has primarily focused on common source (CS) RF transistors. This work focuses on RF switch devices characterized in the common gate (CG) configuration. Temperature‐dependent models are developed from measured data. This work provides a framework for CG high‐frequency RF switch linear model extraction. A linear model versus temperature is extracted for a four finger, 200 μm periphery GaN on Silicon Carbide (SiC) switch FET at from 25°C to 150°C. A 32–38 GHz single pole double throw (SPDT) switch is modeled and compared to measured data. This paper provides the engineer with an accurate multi‐line TRL (mTRL) calibration methodology over temperature and a concise linear switch FET model extraction method. Following this approach will result in improved switch FET models and accurate designs.