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April 7, 2024

Thermal Characterization and Simulation of GaN-on-SiC HEMT Transistors in Transient and Steady-State Regimes

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Authors

KKK. KarrameJNJean‐Christophe NallatambyCCChristophe Chang

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Karrame et al. (2024) studied this question.

synapsesocial.com/papers/68e701f4b6db64358767bc66https://doi.org/10.1109/eurosime60745.2024.10491531
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Analysis of Multi-Finger GaN HEMTs Using Gate Resistance Thermometry, Raman Thermometry, and Infrared Thermal Microscopy2026
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  4. 4Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages2024 · 2 citations
  5. 5An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology2021 · 16 citations