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September 17, 2025Applied Physics Letters

Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs

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Authors

JLJin‐Long LiNortheast Agricultural UniversityQZQing ZhuXidian UniversityYCYilin ChenSouth China Agricultural University

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Implication

Hybrid UV method accurately measures thermal resistance and channel temperature in GaN HEMTs, highlighting improved thermal management strategies.

Key Points

  • The approach led to a quantifiable relationship between channel temperature and power dissipation for GaN HEMTs, enhancing performance.
  • High consistency was demonstrated between computational results and experimental data for thermal resistance extraction.
  • By using UV irradiation, the study effectively suppressed surface trap effects, isolating self-heating phenomena.
  • This research provides a reliable methodology for thermal management design in high electron mobility transistors.

Cite This Study

Li et al. (2025) studied this question.

synapsesocial.com/papers/68d45b2931b076d99fa5db61https://doi.org/10.1063/5.0282034
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