Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 26, 2024IEEE Transactions on Electron Devices

Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance

View Full Paper
Ask AI
Bookmark
Share

Authors

XZXiang ZhengXidian UniversityJPJames W. PomeroyUniversity of BristolGJGautam JindalNokia (Germany)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Zheng et al. (2024) studied this question.

synapsesocial.com/papers/68e777b3b6db6435876ecf6ahttps://doi.org/10.1109/ted.2024.3367309
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaN-On-Diamond HEMT Technology With T AVG = 176°C at P DC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging2019 · 114 citations
  2. 2Thermal Stability and Failure Mechanism of Schottky Gate AlGaN/GaN HEMTs2017 · 32 citations
  3. 3Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress2016 · 51 citations
  4. 4Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications2020 · 164 citations