DC‐bias and temperature included CSWPL model for RF power transistors

A novel frequency domain behavioral modeling method for gallium‐nitride (GaN) devices is presented in this article. By utilizing a multi‐dimensional polynomial function, the proposed technique interpolates DC‐bias voltage and temperature based on the Canonical section‐wise piecewise linear (CSWPL) model framework. A detailed description of the model's theory is provided. With data from 10‐W GaN devices, the model was implemented in commercial software and validated through both DC and radio frequency (RF) tests. A robust predictive ability is demonstrated by the obtained results, thus proving the accuracy of the developed modeling method. This model is superior to the standard CSWPL model in that it is capable of predicting transistor behavior at different bias voltages and temperatures using a single set of parameters, thereby greatly reducing the complexity of the model and the time required for extraction.