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February 14, 2024IEEE Microwave and Wireless Technology Letters

A Sub-6 GHz Asymmetric GaAs SPDT Switch With High Tx-to-Rx Isolation and Low Insertion Loss

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Authors

JLJae‐Eun LeeJSJae‐Hyeok SongMBMin-Seok Baek

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Lee et al. (2024) studied this question.

synapsesocial.com/papers/68e792d4b6db6435877041ddhttps://doi.org/10.1109/lmwt.2024.3362054
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1A 25–30-GHz Asymmetric SPDT Switch for 5G Applications in 65-nm Triple-Well CMOS2019 · 61 citations
  2. 2High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltages and a symmetrical pattern configuration1994 · 35 citations
  3. 3A Small-Size K-Band SPDT Switch Using Alternate CMOS Structure With Resonating Inductor Matching2020 · 45 citations
  4. 4A 2.5-dB Insertion Loss, DC-60 GHz CMOS SPDT Switch in 45-nm SOI2011 · 68 citations
  5. 5DC-40 GHz and 20-40 GHz MMIC SPDT switches1987 · 23 citations