Design of a Miniaturized High-Power Gysel Divider Based on GaN-on-SiC IPD Technology

The proposed Gysel power divider simultaneously achieves high-power handling and miniaturization. A coupled-line pair is introduced to modify the Gysel divide’s structure, enabling the application ofπ-type lumped units and bridged T-coil equivalent circuits for miniaturization based on integrated passive device (IPD) technology. Several key thermal strategies are implemented to achieve high power based on gallium nitride on silicon carbide (GaN-on-SiC). In addition, electrical and thermal measurements demonstrate superior performance. It was demonstrated that the prototype had a compact size of0.1× 0.05(λ g× λ gatf₀) and excellent thermal dissipation capability with power handling capacity exceeding 40 W, exhibiting significant potential for engineering applications.