Institute of Electron Technology

Recent papers from Institute of Electron Technology

1. Role of Quasi-Fermi Levels in Si- and Mg-Related Optical Absorption in Nitride Laser Diodes (LDs): Material ContextElectronics · 2026
2. Special Issue on the 7th International Sino MOS-AK Workshop2025
3. Comprehensive benchmarking and user guide for the characterization of CVD-grown transition metal chalcogenidesAcademia Nano Science Materials Technology · 2025
4. Local structure modification around Si atoms in Si-implanted monocrystalline β-Ga2O3 (100) under heated substrate conditionsActa Materialia · 2025
5. Decentralized finance (DeFi): the ultimate regulatory frontier?Capital Markets Law Journal · 2024
6. On the adsorption and reactivity of element 114, fleroviumFrontiers in Chemistry · 2022
7. Rapid Assessment of SARS-CoV-2 Transmission Risk for Fecally Contaminated River WaterACS ES&T Water · 2021
8. Low-frequency electromagnetic field influences human oral mucosa keratinocyte viability in response to lipopolysaccharide or minocycline treatment in cell culture conditionsBiomedicine & Pharmacotherapy · 2021
9. Search for elements 119 and 120Physical Review C · 2020
10. Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser DiodesACS Applied Materials & Interfaces · 2020
11. Characterization of Self-Heating Process in GaN-Based HEMTsElectronics · 2020
12. The influence of soldering process parameters on the optical and thermal properties of power LEDsSoldering and Surface Mount Technology · 2020
13. Short-Period CdO/MgO Superlattices as Cubic CdMgO Quasi-AlloysCrystal Growth & Design · 2020
14. Coupled Cavity Mid-IR Quantum Cascade Lasers Fabricated by Dry EtchingPhotonics · 2020
15. Current Transport Mechanisms in Zinc Oxide/Silicon Carbide Heterojunction Light‐Emitting Diodesphysica status solidi (b) · 2020
16. Implementation of the inductively coupled plasma etching processes for forming gallium nitride nanorods used in ultraviolet light-emitting diode technologyJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2020
17. Surface Diffusion of Gallium as the Origin of Inhomogeneity in Selective Area Growth of GaN Nanowires on Al x O y Nucleation StripesCrystal Growth & Design · 2020
18. Investigation of Al- and N-implanted 4H–SiC applying visible and deep UV Raman scattering spectroscopyAIP Advances · 2020
19. Edge termination design for 1.7 kV silicon carbide p-i-n diodesBulletin of the Polish Academy of Sciences Technical Sciences · 2020
20. Field effect transistor with thin AlOxNy film as gate dielectricMicroelectronics International · 2020