Adroit Materials (United States)

Recent papers from Adroit Materials (United States)

1. High hole concentration in Mg-doped GaN achieved by controlling compensationJournal of Applied Physics · 2026
2. Surface-catalyzed decomposition of ammonia in MOCVD growth of III-nitridesApplied Physics Letters · 2026
3. A pathway to strain-free AlGaN grown on native GaN substratesJournal of Applied Physics · 2026
4. Enabling the growth of thick, relaxed AlGaN films on bulk GaN substratesJournal of Applied Physics · 2026
5. Hole transport analysis in N-polar p-GaNJournal of Applied Physics · 2026
6. High-current, high-voltage AlN p–n junction diodes enabled by compositional gradingApplied Physics Letters · 2026
7. Elimination of wing tilt laterally overgrown GaNApplied Physics Letters · 2026
8. On the origin of carrier loss in Mg-doped N-polar GaNApplied Physics Letters · 2025
9. From a pyramid to an amphitheatre (triangle to circle): embracing the totality of evidence for the postmarketing evaluation of the safety of therapeutic interventionsBMJ Open · 2025
10. Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealingApplied Physics Express · 2025
11. Experimental Characterization of Impact Ionization and Projection of Critical Electric Fields in High‐Al Content AlGaNphysica status solidi (a) · 2025
12. Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxyApplied Physics Letters · 2025
13. Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factorApplied Physics Letters · 2024
14. Recent progress of AlGaN based UVC detectors2024
15. Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activationJournal of Applied Physics · 2024
16. Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure AnnealingIEEE Transactions on Electron Devices · 2023
17. High p-conductivity in AlGaN enabled by polarization field engineeringApplied Physics Letters · 2023
18. Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction OptoelectronicsACS Applied Nano Materials · 2023
19. Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factorApplied Physics Express · 2023
20. High electron mobility in AlN:Si by point and extended defect managementJournal of Applied Physics · 2022