AmberWave (United States)

Recent papers from AmberWave (United States)

1. Extraction of Essential Solar Cell Parameters of Subcells in a Tandem Structure With a Novel Three-Terminal Measurement TechniqueIEEE Journal of Photovoltaics · 2017
2. Advanced surface passivation of epitaxial boron emitters for high-efficiency ultrathin crystalline silicon solar cellsJapanese Journal of Applied Physics · 2017
3. Performance improvement for epitaxially grown SiGe on Si solar cell using a compositionally graded SiGe baseApplied Physics Letters · 2016
4. Performance improvement for epitaxially grown SiGe on Si solar cell by optimizing the back surface fieldphysica status solidi (RRL) - Rapid Research Letters · 2016
5. Ultrathin Silicon Solar Cell Loss AnalysisIEEE Journal of Photovoltaics · 2016
6. Current and efficiency improvement for a GaAsP/SiGe on Si tandem solar cell device achieved by light trapping techniquesphysica status solidi (RRL) - Rapid Research Letters · 2016
7. Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping2016
8. Analysis of Losses in Open Circuit Voltage for an 18-μm Silicon Solar CellApplied Sciences · 2015
9. Material and Device Improvement of GaAsP Top Solar Cells for GaAsP/SiGe Tandem Solar Cells Grown on Si SubstratesIEEE Journal of Photovoltaics · 2015
10. Development of a 16.8% Efficient 18-μm Silicon Solar Cell on SteelIEEE Journal of Photovoltaics · 2014
11. A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniquesJournal of Applied Physics · 2009
12. Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio TrappingJournal of The Electrochemical Society · 2009
13. Fabrication of Low-Defectivity, Compressively Strained Ge on Si[sub 0.2]Ge[sub 0.8] Structures Using Aspect Ratio TrappingJournal of The Electrochemical Society · 2009
14. Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral OvergrowthElectrochemical and Solid-State Letters · 2009
15. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping techniqueApplied Physics Letters · 2008
16. Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping2008
17. Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and dopingJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008
18. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping techniqueElectronics Letters · 2008
19. Defect reduction of GaAs/Si epitaxy by aspect ratio trappingJournal of Applied Physics · 2008
20. Detailed Simulation Study of a Reverse Embedded-SiGe Strained-Silicon MOSFETIEEE Transactions on Electron Devices · 2008