Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth, Park, J.-S., Curtin, M., Hydrick, J. M., Bai, J., Li, J.-T., Cheng, Z., Carroll, M., Fiorenza, J. G., Lochtefeld, A.
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Park et al. (2009) studied this question.
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