Guangdong Greater Bay Area Institute of Integrated Circuit and System

Recent papers from Guangdong Greater Bay Area Institute of Integrated Circuit and System

1. Physics-informed phase retrieval from a single interferogram for wafer surface measurementOptics Express · 2026
2. Distortion removal in wafer surface interference fringe patterns based on large language modelsOptics Express · 2026
3. Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR ImagingNanomaterials · 2026
4. High-performance Ge-on-insulator photodetector enabled by thick Ge spacer and tensile-strained GeSi/Ge multiple quantum wellsOptics Express · 2026
5. Optimization of Strain and Doping in Ge/GeSi Nanoscale Multilayers for GOI Short-Wave Infrared Imaging ApplicationsNanomaterials · 2026
6. Bioinspired TeSeO/InZnO Optoelectronic Synapse for Broadband UV–Visible–NIR Sensing and Multifunctional Reservoir ComputingNano Letters · 2026
7. Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power ApplicationsElectronics · 2025
8. Fabrication and Characterization of Back-Gate and Front-Gate Ge-on-Insulator Transistors for Low-Power ApplicationsElectronics · 2025
9. Investigation of degradation mechanisms and post-annealing effects in polymer field-effect transistors under x-ray irradiationApplied Physics Letters · 2025
10. Convergence of Thermistor Materials and Focal Plane Arrays in Uncooled Microbolometers: Trends and PerspectivesNanomaterials · 2025
11. Ternary Logic Design Based on Novel Tunneling-Drift-Diffusion Field-Effect TransistorsNanomaterials · 2025
12. Ultraviolet Irradiation-Induced High Performance InZnO Thin-Film Transistors and Optoelectronic Synapse DevicesIEEE Transactions on Electron Devices · 2025
13. Multiterminal Tunable InZnO Dendritic Transistor-Based Reservoir Computing for Chaotic Time Series PredictionIEEE Transactions on Electron Devices · 2025
14. Demonstration of Planar Geometry PIN Photodetectors with GeSi/Ge Multiple Quantum Wells Hybrid Intrinsic Region on a Ge-on-Insulator PlatformACS Applied Electronic Materials · 2025
15. A Novel 1T-APSUsing 22nm FD-SOI Technology With Record High Tunable Sensitivity RangeIEEE Electron Device Letters · 2025
16. Impact of Al/Ti Electrodes on the Performance and Operational Stability of n‐Channel Solution‐Processed Solid‐State Electrolyte‐Gated Transistors: Applications in Reservoir ComputingAdvanced Electronic Materials · 2025
17. Review of Short-Wavelength Infrared Flip-Chip Bump Bonding Process TechnologySensors · 2025
18. The Synergy Effect of Al/Ti Electrodes on Effective Electron Injection for n-Channel Transistors and Ambipolar Complementary CircuitsThe Journal of Physical Chemistry Letters · 2024
19. Organic ferroelectric transistors with composite dielectric for efficient neural computingApplied Physics Letters · 2024
20. Bio‐Inspired P‐type TeSeO x Synaptic Transistor Based on Multispectral Sensing for Neuromorphic Visual Multilevel NociceptorSmall Methods · 2024