Toshiba Nanoanalysis Corporation

Recent papers from Toshiba Nanoanalysis Corporation

1. Non-destructive visualization of internal structural changes in humidified magnesium oxide tablets using X-ray computed tomographyScientific Reports · 2024
2. Two-dimensional Kβ-Kα fluorescence spectrum by nonlinear resonant inelastic X-ray scatteringNature Communications · 2023
3. Origin of Unexpected Ir3+ in a Superconducting Candidate Sr2IrO4 System Analyzed by Photoelectron HolographyInorganic Chemistry · 2023
4. Visualizing fluid transport inside orally disintegrating tablets and changes in tablets using real-time X-ray radiography and X-ray computed tomographyDrug Development and Industrial Pharmacy · 2022
5. Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowireJapanese Journal of Applied Physics · 2021
6. Total reflection hard x-ray photoelectron spectroscopy: Applications to strongly correlated electron systemsPhysical review. B./Physical review. B · 2021
7. Screw dislocation that converts p-type GaN to n-type: Microscopic study on Mg condensation and leakage current in p–n diodesApplied Physics Letters · 2020
8. Transient quantum isolation and critical behavior in the magnetization dynamics of half-metallic manganitesPhysical review. B./Physical review. B · 2019
9. Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage currentApplied Physics Letters · 2019
10. Matrix and element dependences of useful yield in Si and SiO2 matrices using laser-ionization sputtered neutral mass spectrometryJournal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2018
11. Nano-SiC region formation in (100) Si-on-insulator substrate: Optimization of hot-C ⁺ -ion implantation process to improve photoluminescence intensityJapanese Journal of Applied Physics · 2018
12. Quantitativeness in laser-assisted atom probe analysis of boron and carbon codoped in siliconJapanese Journal of Applied Physics · 2017
13. Evaluation of Ge Oxidation State in Ge Nanoparticles Formed in Thin SiO2 Layer by Negative-Ion Implantation and Successive Two-Stage AnnealingTransactions of the Materials Research Society of Japan · 2016
14. Three-Dimensional Dopant Characterization of Actual Metal–Oxide–Semiconductor Devices of 65 nm Node by Atom Probe TomographyApplied Physics Express · 2013
15. Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomographyApplied Physics Letters · 2012
16. Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imagingApplied Physics Letters · 2011
17. Impact of carbon coimplantation on boron behavior in silicon: Carbon–boron coclustering and suppression of boron diffusionApplied Physics Letters · 2011
18. Depth and lateral resolution of laser-assisted atom probe microscopy of silicon revealed by isotopic heterostructuresJournal of Applied Physics · 2011
19. Deconvolution analyses of secondary ion mass spectrometry shallow depth profiles with depth resolution functions from silicon substrate-based delta-doped samplesJournal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009
20. Contact resistance reduction of Pt-incorporated NiSi for continuous CMOS scaling ∼ Atomic level analysis of Pt/B/As distribution within silicide films ∼2008