CoolCad Electronics (United States)

Recent papers from CoolCad Electronics (United States)

1. Innovative SiC ultraviolet instrumentation development with potential applications for the Habitable Worlds ObservatoryJournal of Astronomical Telescopes Instruments and Systems · 2025
2. A Non-approximated Steady State Model-derived Semiconductor Loss Optimization for Resonant CLLC2024
3. Design Optimization of a fully GaN-based Buck-derived Active Power Decoupler for a Single-Phase Electrolytic Capacitor-less PV MicroinverterIEEE Journal of Emerging and Selected Topics in Power Electronics · 2024
4. Unlocking Circuits for Quantum With Open Source Silicon: A first look at measured open source silicon results at 4 KIEEE Solid-State Circuits Magazine · 2024
5. Online Optimization of Decision Control Variables Ensuring Loss-Minima Tracking in a TAB-Based DC–AC–DC Switching NetworkIEEE Journal of Emerging and Selected Topics in Industrial Electronics · 2023
6. Switching Modulation Optimization for Efficiency Maximization in a Single-Stage Series Resonant DAB-Based DC–AC ConverterIEEE Journal of Emerging and Selected Topics in Power Electronics · 2023
7. Steady-State Model-Derived Multivariable Loss Optimization for Triple Active C³L³ Resonant ConverterIEEE Transactions on Transportation Electrification · 2023
8. Ultrafast ID – VG Technique for Reliable Cryogenic Device CharacterizationIEEE Journal of the Electron Devices Society · 2023
9. Parasitic Component Inclusive Optimum Phase-Frequency Contour Enabled Synchronous Rectification of Asymmetric CLLC Resonant ConverterIEEE Open Journal of Power Electronics · 2023
10. Investigation of ZVS Criteria and Optimization of Switching Loss in a Triple Active Bridge Converter Using Penta-Phase-Shift ModulationIEEE Journal of Emerging and Selected Topics in Power Electronics · 2022
11. Energy Dependence of Atmospheric Neutron-Induced Failures in Silicon Carbide Power DevicesIEEE Transactions on Nuclear Science · 2022
12. Predicting Cosmic Ray-Induced Failures in Silicon Carbide Power DevicesIEEE Transactions on Nuclear Science · 2019
13. Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout2018
14. Terrestrial Neutron-Induced Failures in Silicon Carbide Power MOSFETs and DiodesIEEE Transactions on Nuclear Science · 2018
15. Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial NeutronsIEEE Transactions on Nuclear Science · 2016
16. Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfacesJournal of Applied Physics · 2014
17. Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETsIEEE Transactions on Nuclear Science · 2012
18. Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments2012
19. Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation2012
20. Compact and Distributed Modeling of Cryogenic Bulk MOSFET OperationCivil War Book Review · 2010