IntelliEPI (United States)

Recent papers from IntelliEPI (United States)

1. AlInAsSb/InGaAs single-photon avalanche diodes with high avalanche breakdown probabilityApplied Physics Letters · 2026
2. Measuring What the TPU Scaling Playbook Predicts: Tensor Parallelism, Collectives, and a Per Layer Type Optimization in vLLM Serving2026
3. The Sliding Window Premium: Throughput, Goodput, and Per Layer Attention Costs of Hybrid Attention Models at Realistic Context Lengths on TPU v6e2026
4. Batch Scaling and Goodput of a Tuned Attention Kernel on TPU v6e: Throughput, Latency, Energy, and Cost Measurements of vLLM Serving Gemma 4 31B2026
5. Batch Scaling and Goodput of a Tuned Attention Kernel on TPU v6e: Throughput, Latency, Energy, and Cost Measurements of vLLM Serving Gemma 4 31B2026
6. The Decode Block Size Heuristic in TPU Ragged Paged Attention Wastes 28 to 69 Percent of LLM Inference Throughput2026
7. The Decode Block Size Heuristic in TPU Ragged Paged Attention Reduces LLM Inference Throughput by 28 to 69 Percent2026
8. Token Velocity on a Single TPU v5e Chip: Per Bucket Prefill and Decode Rates for Gemma 2B and Their Dependence on Kernel Configuration2026
9. From 1,540 to 19,511 Tokens per Second on a Single TPU v5e Chip: A Measurement Study of Large Language Model Inference Optimization2026
10. From 1,540 to 19,511 Tokens per Second on a Single TPU v5e Chip: A Measurement Study of Large Language Model Inference Optimization2026
11. Random alloy AlInAsSb single photon avalanche diodes with high breakdown probabilityJournal of Applied Physics · 2025
12. Real-time Data Integration in Hybrid Cloud Environments: Challenges and SolutionsInternational Journal of Scientific Research in Computer Science Engineering and Information Technology · 2025
13. Status of multi-wafer production MBE capabilities for extended SWIR III-V epi materials for IR detectionOpto-Electronics Review · 2023
14. Development of a Long-Wave Infrared Band-Edge (LWIR BE) thermometry instrumentReview of Scientific Instruments · 2018
15. High Accuracy Modeling Method of UTC-PD PhotodiodeAdvanced materials research · 2013
16. Lg = 60 nm recessed In0.7Ga0.3As metal-oxide-semiconductor field-effect transistors with Al2O3 insulatorApplied Physics Letters · 2012
17. InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and ION/IOFF Ratio Near 10⁶IEEE Electron Device Letters · 2012
18. Vertical InGaAs/InP Tunnel FETs With Tunneling Normal to the GateIEEE Electron Device Letters · 2011
19. 36 GHz bandwidth optoelectronic integrated circuit with flip-chip-assembled InP HBT/evanescently coupled photodiodeIET Optoelectronics · 2008
20. High-Performance 650 nm Resonant-Cavity Light-Emitting Diodes for Plastic Optical-Fiber ApplicationJapanese Journal of Applied Physics · 2007