Breaking the Boltzmann Limit in Sub-5-nm Monolayer CdPS 3 Transistors

Key Points

• The aim is to explore whether tunnel field-effect transistors (TFETs) can surpass the Boltzmann limit in performance.
• Utilized first-principle quantum transport simulations to analyze TFET operation.
• Investigated the behavior of monolayer CdPS3 transistors.
• Observed that TFETs can achieve performance beyond the 60 mV/dec Boltzmann limit.
• Demonstrated improved efficiency in electrical characteristics for sub-5-nm devices.