Breaking the Boltzmann Limit in Sub-5-nm Monolayer CdPS 3 Transistors

Manzhou Wang; Yuliang Mao

doi:10.1039/d6cp00753h

January 1, 2026Physical Chemistry Chemical Physics

Breaking the Boltzmann Limit in Sub-5-nm Monolayer CdPS 3 Transistors

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Key Points

The aim is to explore whether tunnel field-effect transistors (TFETs) can surpass the Boltzmann limit in performance.
Utilized first-principle quantum transport simulations to analyze TFET operation.
Investigated the behavior of monolayer CdPS3 transistors.
Observed that TFETs can achieve performance beyond the 60 mV/dec Boltzmann limit.
Demonstrated improved efficiency in electrical characteristics for sub-5-nm devices.

Implication

This research demonstrates the potential of TFETs to exceed the Boltzmann limit in monolayer CdPS3, implying advances in transistor performance.

Abstract

Tunnel field-effect transistors (TFETs) have gained considerable attention for their potential to overcome the 60 mV/dec Boltzmann limit of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). Using first-principle quantum transport simulations, we...

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Cite This Study

Wang et al. (2026) studied this question.

synapsesocial.com/papers/69e9ba2a85696592c86ec7ca https://doi.org/10.1039/d6cp00753h

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Breaking the Boltzmann Limit in Sub-5-nm Monolayer CdPS 3 Transistors

Key Points

Implication

Abstract

Discussion

Cite This Study

Breaking the Boltzmann Limit in Sub-5-nm Monolayer CdPS 3 Transistors

Key Points

Implication

Abstract

Discussion

Cite This Study

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