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March 14, 2026ACS Applied Electronic Materials1 citations

Quantum Transport Simulations of CuBr Transistors for High-Performance Applications

Ab Initio Quantum Transport Simulations of the Sub-3 nm Gate-Length Monolayer CuBr Transistors for High-Performance Device Applications

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Authors

MHMudasser HusainYAYounas AhmedXYXia Yang

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Overview

Quantum transport simulations show CuBr transistors demonstrate optimal performance metrics, indicating potential for future devices.

Key Points

  • Evaluate the performance limits of monolayer CuBr transistors for high-performance device applications.
  • Performed quantum transport simulations on sub-3 nm gate-length double-gated n-type FETs using monolayer CuBr.
  • Assessed performance metrics including Ion, subthreshold swing, and transconductance.
  • CuBr n-type FETs showed Ion of 1372 μA/μm and ultralow subthreshold swing of 45 mV/dec.
  • Transconductance was measured at 5.62 mS/μm, indicating strong device performance.
  • Results outperformed the ITRS requirements for the 2028 technology node.
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Cite This Study

Husain et al. (2026) studied this question.

synapsesocial.com/papers/69b4b9db18185d8a39801ed8https://doi.org/10.1021/acsaelm.5c02676
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