Ge-Doping-Induced Phase Engineering of β / ε -Ga 2 O 3 for High-Performance Ultraviolet Detector

Key Points

• Investigate how Ge-doping impacts the phase structure and performance of Ga2O3 for ultraviolet detection.
• Characterized phase transitions in Ga2O3 with varying levels of Ge-doping.
• Measured responsivity and dark current of the DUV photodetectors.
• Analyzed carrier transport properties and defect densities.
• Ge-doped Ga2O3 showed a significant increase in responsivity compared to undoped samples.
• Lower dark current was observed in samples with optimal Ge-doping levels.
• Improved carrier transport properties correlate with enhanced detector performance.