What question did this study set out to answer?

Investigate how Ge-doping impacts the phase structure and performance of Ga2O3 for ultraviolet detection.

May 15, 2026Journal of Materials Chemistry C0 citations

Ge-Doping-Induced Phase Engineering of β / ε -Ga 2 O 3 for High-Performance Ultraviolet Detector

JXJiahui XieShandong University CLchen liUniversity of Science and Technology of China XLXinyu LiuShandong University

Key Points

Investigate how Ge-doping impacts the phase structure and performance of Ga2O3 for ultraviolet detection.
Characterized phase transitions in Ga2O3 with varying levels of Ge-doping.
Measured responsivity and dark current of the DUV photodetectors.
Analyzed carrier transport properties and defect densities.
Ge-doped Ga2O3 showed a significant increase in responsivity compared to undoped samples.
Lower dark current was observed in samples with optimal Ge-doping levels.
Improved carrier transport properties correlate with enhanced detector performance.

Abstract

Solar-blind deep-ultraviolet (DUV) photodetectors based on intrinsic Ga 2 O 3 typically suffer from a trade-off between low responsivity and high dark current due to poor carrier transport and high defect densities. To...

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