First-principles study of d 0 magnetism in a SnI 2 monolayer induced by P and As impurities | Synapse
March 7, 2026Open Access
First-principles study of d 0 magnetism in a SnI 2 monolayer induced by P and As impurities
Key Points
This research explores how doping a SnI2 monolayer with pnictogen atoms can induce d0 magnetism.
Utilized first-principles calculations to investigate magnetic properties.
Examined different doping levels of P and As impurities.
Analyzed the effects on electronic structure and magnetic anisotropy.
Induced d0 magnetism through doping with P and As atoms.
Demonstrated tunable magnetic properties based on the type and concentration of impurities.
Revealed changes in electronic structure correlated with magnetic anisotropy.
Abstract
Doping a semiconductor SnI 2 monolayer with pnictogen atoms is proposed to induce d 0 magnetism with tunable electronic properties and magnetic anisotropy.