First-principles study of d ⁰ magnetism in a SnI ₂ monolayer induced by P and As impurities

Pham Minh Tan; Nguyen Thanh Son; Duy Khanh Nguyen; J. Guerrero-Sánchez; D. M. Hoat

doi:10.1039/d5ra09400c

January 1, 2026RSC AdvancesOpen Access

First-principles study of d ⁰ magnetism in a SnI ₂ monolayer induced by P and As impurities

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Key Points

This research explores how doping a SnI2 monolayer with pnictogen atoms can induce d0 magnetism.
Utilized first-principles calculations to investigate magnetic properties.
Examined different doping levels of P and As impurities.
Analyzed the effects on electronic structure and magnetic anisotropy.
Induced d0 magnetism through doping with P and As atoms.
Demonstrated tunable magnetic properties based on the type and concentration of impurities.
Revealed changes in electronic structure correlated with magnetic anisotropy.

Implication

First-principles study demonstrates tunable d0 magnetism in SnI2 monolayer, suggesting enhanced electronic properties.

Abstract

Doping a semiconductor SnI 2 monolayer with pnictogen atoms is proposed to induce d 0 magnetism with tunable electronic properties and magnetic anisotropy.

Discussion

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Cite This Study

Tan et al. (2026) studied this question.

synapsesocial.com/papers/69abc2175af8044f7a4eb53d https://doi.org/10.1039/d5ra09400c

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First-principles study of d ⁰ magnetism in a SnI ₂ monolayer induced by P and As impurities

Key Points

Implication

Abstract

Discussion

Cite This Study

First-principles study of d ⁰ magnetism in a SnI ₂ monolayer induced by P and As impurities

Key Points

Implication

Abstract

Discussion

Cite This Study

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