Experimental study reveals carrier-mediated ferromagnetism and anomalous Hall effect in p-type (In,Mn)As, indicating bound magnetic polaron formation at low temperatures.
Magnetotransport properties of p-type (In,Mn)As, a new diluted magnetic semiconductor based on a III-V semiconductor, are studied. The interaction between the holes and the Mn 3d spins is manifested in the anomalous Hall effect, which dominates the Hall resistivity from low temperature (0.4 K) to nearly room temperature, and in the formation of partial ferromagnetic order below 7.5 K, which is a cooperative phenomenon related to carrier localization. The coexistence of remanent magnetization and unsaturated spins as well as the large negative magnetoresistance at low temperatures is explained by the formation of large bound magnetic polarons.
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Ohno et al. (1992) studied this question.
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