With the development of new energy power systems and high-frequency power electronics technology, SiC MOSFETs have become ideal alternatives to traditional silicon-based devices due to their advantages of high switching frequency and low loss. However, crosstalk in driver circuits under high-frequency operating conditions severely restricts their reliability. This paper conducts a systematic study on the crosstalk mechanism of SiC MOSFET driver circuits, adopting multi-dimensional crosstalk suppression strategies through theoretical modelling, PCB layout optimization, and experimental verification. A dual-pulse test platform controlled by FPGA is built to verify the stability and reliability of the optimized driver circuit under a hig h bus voltage condition. This research provides a low-parasitic-parameter and high-reliability driver design scheme for SiC MOSFETs in high-frequency application scenarios such as new energy vehicles and photovoltaic inverters, which is of important reference value for promoting the engineering application of wide-bandgap semiconductor devices.
You et al. (Fri,) studied this question.
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