Low-temperature operation of multiple quantum-well AlxGa1−xAs-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition

The phonon-assisted laser operation (4.2–77 °K) of multiple quantum-well AlxGa1−xAs-GaAs heterostructure diodes is described. Laser operation is observed on phonon sidebands ∼36 meV below the lowest confined-particle transitions. Tunnel injection into the confined-particle states, with light emission and negative-resistance regions, is also observed in these multiple quantum-well heterostructures. Two different multiple quantum-well heterostructures grown by metalorganic chemical vapor deposition are described. The first consists of six GaAs quantum wells (Lz∼120 Å) coupled by five AlxGa1−xAs (x∼0.3) layers (∼120 Å), and the second is similar except for a reduction in layer size to ∼50 Å.