Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasers

Key Points

• To establish room-temperature continuous operation of AlxGa1−xAs-GaAs quantum-well lasers using photopumping.
• Quantum-well heterostructures grown by metalorganic chemical vapor deposition (MO-CVD).
• Lasers tested at room temperature (300 °K) and embedded in Cu under diamond windows.
• Use of undoped or compensated GaAs active layers with specific carrier concentrations.
• Demonstrated continuous operation of the quantum-well lasers at room temperature.
• The lasers exhibit undoped or compensated active layers, showing operational viability in standard conditions.
• Reported active layer thicknesses of approximately 200 Å.