Dielectrophoresis‐Directed Assembly of Aligned semiconducting single‐walled carbon nanotubes Channels with Carbon Contacts for Complementary Metal‐Oxide‐Semiconductor‐Compatible Logic Circuits

Semiconducting single‐walled carbon nanotubes (s‐SWNTs) are considered promising channel materials for high‐performance, solution‐processable electronics due to their exceptional carrier transport and mechanical flexibility. However, the inherent presence of metallic SWNTs within as‐synthesized mixtures significantly hinders their application in thin‐film transistors (TFTs), requiring high on/off ratios. Here, a systematical fabrication approach for s‐SWNT TFTs with fully carbon‐based architecture is demonstrated, employing SWNTs as both channel and electrode materials. By optimizing dielectrophoretic alignment parameters—including concentration, frequency, time, and voltage amplitude—controlled nanotube density and alignment between SWNT electrodes are achieved. To further enhance electrical switching characteristics, the air breakdown‐based purification is applied to remove inherently metallic pathways from the channel. This all‐carbon configuration not only ensures excellent geometrical material continuity across the channel and electrodes but also further enables monolithic integration with indium‐gallium‐zinc oxide thin films for complementary logic inverter demonstration. The proposed method presents a viable route toward wafer‐compatible, low‐temperature, and hybrid‐integrated electronic platforms using carbon nanomaterials.