Flexible Ag2Se thin films show improved thermoelectric properties with varied sputtering power and annealing, indicating their potential for self-powered devices.
Ag2Se has attracted significant attention as a promising alternative to Bi2Te3 for near-room-temperature thermoelectric (TE) applications. In this study, flexible Ag2Se thin films were fabricated via magnetron sputtering under different sputtering power settings, followed by post-deposition annealing to optimize their TE properties. Structural and compositional analyses confirmed the successful synthesis of Ag2Se films with high crystallinity. Additionally, tuning the sputtering power and annealing temperatures can effectively enhance the electrical conductivity, Seebeck coefficient, and overall power factor. A significant power factor of ~17.4 µW·cm−1·K−2 at 100 °C was achieved in the 30 W sputtering power and 300 °C annealing sample, pointing out the huge potential of Ag2Se thin films as self-powered flexible devices.
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Zhong et al. (2025) studied this question.
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