This research reveals how thermal conductivity varies with diameter in silicon nanowires, indicating the role of phonon scattering in their structural evolution.
Understanding the intrinsic thermal transport properties of ultrathin semiconductor nanowires with varying diameters is crucial for the efficient thermal management of next-generation nanoelectronic devices. Here, we developed high-fidelity machine-learning potential (MLP) within the fourth-generation neuroevolution potential framework to elucidate the interplay between structural evolution, amorphous transition behavior, and thermal transport in silicon nanowires (SiNWs), resolving long-standing discrepancies between simulations and experiments. The structure of SiNWs below 1.1 nm in diameter undergoes a complete amorphous transformation, which originates from an amorphous surface structure of 5-6 atomic layers. We identify a nonmonotonic dependence of thermal conductivity on nanowire diameter due to competition between N (Normal) and U (Umklapp) phonon scattering processes. At frequencies <1 THz, N-process scattering rates exceed U-process rates by 3 orders of magnitude in ultrafine SiNWs, enabling fluid-like phonon transport. This study underscores the transformative potential of high-fidelity MLP in unraveling complex nanoscale material behaviors.
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Xu et al. (2025) studied this question.
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