Field-free switching is achieved using interlayer Dzyaloshinskii-Moriya interaction in a spintronic device, indicating new storage potential.
Interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has the unique advantage of achieving field-free switching in perpendicular magnetic anisotropy (PMA) systems, which is crucial for the practical application of spintronic devices. Here, we use oblique angle deposition (OAD) technology to study the ability of IL-DMI to mediate field-free switching in the Pt/CoFe(PMA)/Pt/CoFe(PMA)/Pt system. By optimizing the thickness of the middle core layers, the optimal thickness combination that satisfies low J c and a switching ratio of as high as 79% is determined. Based on this, we successfully constructed a stable two-state storage device.
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Wang et al. (2025) studied this question.
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