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This is a In Vitro Study study.

August 21, 2025Open Access

Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC

MKMasashi KatoNagoya Institute of Technology

Key Points

More Al ions channel through the [000-1] direction than the [0001] direction, indicating a better implantation outcome.
Implantation to the Si-face results in a higher number of Al ions compared to the C-face, highlighting its efficiency in device fabrication.
Channeling ion implantation was used to target the 4H-SiC crystal axes, focusing on both [0001] and [000-1] directions.
Utilizing the Si-face for Al ion implantation may enhance the performance and reliability of 4H-SiC devices.

Abstract

Abstract Channeling ion implantation has attracted attention in the fabrication of 4H-SiC devices because of the capability of deep ion implantation with relatively low acceleration energy. In the case of the channeling to the crystal axes 〈0001〉 of 4H-SiC, there are two directions: 0001 and 000-1. In this work, we performed channeling Al ion implantation to the 0001 and 000-1 directions in 4H-SiC by implantation to the Si- or C-faces. The results show that the number of channeled ions to the 000-1 direction is larger compared to the case for implantation to the 0001 direction. Therefore, when we employ channeling Al ion implantation for 4H-SiC device fabrication, utilization of the Si-face is preferable.

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