Investigation of ESD and EOS Integrated Protection Device Featuring Quick Triggering, Small Snapback Voltage and Strong Robustness

In order to address the delayed response and high latch-up risk in the dual-directional high-voltage silicon-controlled rectifier (DHSCR) and MOS-triggered DHSCR (MDHSCR), a novel BJT-triggered DHSCR (BDHSCR) structure is proposed and investigated. By incorporating assistant triggering paths, the design enables orderly activation of electrostatic discharge (ESD) and electrical overstress (EOS) protections, thereby achieving highly efficient, integrated protection against both ESD and EOS events. By further verifying with TCAD simulation and comprehensive testing, results show that the designed BDHSCR demonstrates superior integration density and enhanced ESD/EOS protection capabilities. Compared to the conventional DHSCR and MDHSCR structures, the ESD protection performance of BDHSCR presents a higher failure current of 10.6 A, a smaller snapback voltage of 6.2 V, a higher holding voltage of 8.5 V, a faster turn-on speed of 7.8 ns, and a larger IPP of 2.8 A. These novel design of BDHSCR featuring quick triggering, small snapback voltage and strong robustness, contributes to enhance the stability and reliability of automotive-grade electronic systems.